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| 2N5172 2N5172 NPN Version 2006-05-15 Power dissipation Verlustleistung E BC General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause 18 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-volt. - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS 25 V 25 V 5V 9 Grenzwerte (TA = 25C) 2N5172 625 mW 1) 100 mA -55...+150C -55...+150C Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 10 V, IC = 10 mA Small-Signal current gain - Kleinsignal-Stromverstarkung VCE = 10 V, IC = 1 mA, f = 1.0 kHz Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 25 V (E open) VCB = 25 V, Tj = 100C (E open) Collector-Emitter cutoff current - Kollektorreststrom VCE = 25 V (B-E short) Emitter-Base-cutoff current - Emitter-Basis-Reststrom VEB = 5 V (C open) IEBO - ICES - ICBO ICBO - - hfe 100 hFE 100 Kennwerte (Tj = 25C) Typ. - - - - - - Max. 500 750 100 nA 10 A 100 nA 100 nA 1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 1 2N5172 Characteristics (Tj = 25C) Min. Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA Base-Emitter-voltage - Basis-Emitter-Spannung VCE = 10 V, IC = 10 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 2 mA, f = 20 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft CCB0 RthA 1.6 pF - < 200 K/W 1) 10 pF fT - 120 MHz - VBE(on) 0.5 V - 1.2 V VCEsat VBEsat - - - 0.75 V 0.25 V - Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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